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IPB180N06S4H1ATMA1

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Rochester Electronics IPB180N06S4H1ATMA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPB180N06S4H1ATMA1
Description
MOSFET N-CH 60V 180A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPB180N06S4H1ATMA1 PDF
In Stock
890
IPB180N06S4H1ATMA1 Tech Specifications
SeriesOptiMOS™
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs270 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds21.9 pF @ 25 V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-3
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
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Request Quote Now

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