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FQU4N50TU-WS

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Sanyo Semiconductor/ON Semiconductor FQU4N50TU-WS

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FQU4N50TU-WS
Description
MOSFET N-CH 500V 2.6A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQU4N50TU-WS PDF
In Stock
513
FQU4N50TU-WS Tech Specifications
SeriesQFET®
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds460 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
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