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NVTR01P02LT1G

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Rochester Electronics NVTR01P02LT1G

Manufacturer :
Rochester Electronics
Mfr. Part # :
NVTR01P02LT1G
Description
SINGLE P-CHANNEL POWER MOSFET -2
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NVTR01P02LT1G PDF
In Stock
9999
NVTR01P02LT1G Tech Specifications
Series-
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.1 nC @ 4 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds225 pF @ 5 V
FET Feature-
Power Dissipation (Max)400mW (Ta)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3
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