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SI8466EDB-T2-E1

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Vishay / Siliconix SI8466EDB-T2-E1

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI8466EDB-T2-E1
Description
MOSFET N-CH 8V 4MICROFOOT
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI8466EDB-T2-E1 PDF
In Stock
12970
SI8466EDB-T2-E1 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8 V
Current - Continuous Drain (Id) @ 25°C3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs43mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 4.5 V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds710 pF @ 4 V
FET Feature-
Power Dissipation (Max)780mW (Ta), 1.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-Microfoot
Package / Case4-UFBGA, WLCSP
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Request Quote Now

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