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IPP086N10N3G

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Rochester Electronics IPP086N10N3G

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPP086N10N3G
Description
POWER FIELD-EFFECT TRANSISTOR, 8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPP086N10N3G PDF
IPP086N10N3G Tech Specifications
Series*
PackageBulk
Part StatusActive
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-
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