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SQV120N10-3M8_GE3

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Vishay / Siliconix SQV120N10-3M8_GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SQV120N10-3M8_GE3
Description
MOSFET N-CH 100V 120A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SQV120N10-3M8_GE3 PDF
SQV120N10-3M8_GE3 Tech Specifications
SeriesAutomotive, AEC-Q101, TrenchFET®
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs190 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7230 pF @ 25 V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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Request Quote Now

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