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IPW65R125C7XKSA1

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Rochester Electronics IPW65R125C7XKSA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPW65R125C7XKSA1
Description
MOSFET N-CH 650V 18A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPW65R125C7XKSA1 PDF
IPW65R125C7XKSA1 Tech Specifications
SeriesCoolMOS™ C7
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1.67 pF @ 400 V
FET Feature-
Power Dissipation (Max)101W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3
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Request Quote Now

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