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SIHB12N50E-GE3

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Vishay / Siliconix SIHB12N50E-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIHB12N50E-GE3
Description
MOSFET N-CH 500V 10.5A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIHB12N50E-GE3 PDF
In Stock
204
SIHB12N50E-GE3 Tech Specifications
Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds886 pF @ 100 V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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