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FDP027N08B-F102

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Sanyo Semiconductor/ON Semiconductor FDP027N08B-F102

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FDP027N08B-F102
Description
MOSFET N-CH 80V 120A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDP027N08B-F102 PDF
In Stock
390
FDP027N08B-F102 Tech Specifications
SeriesPowerTrench®
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs178 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13530 pF @ 40 V
FET Feature-
Power Dissipation (Max)246W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
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