| Series | - | |
| Package | Tube | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2322 pF @ 100 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 208W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D²PAK (TO-263) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
We can supply SIHB21N65EF-GE3, use the request quote form to request SIHB21N65EF-GE3 pirce and lead time. IKeyParts.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB21N65EF-GE3. The price and lead time for SIHB21N65EF-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB21N65EF-GE3. We look forward to working with you to establish long-term relations of cooperation.
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