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TK11P65W,RQ

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Toshiba Electronic Devices and Storage Corporation TK11P65W,RQ

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TK11P65W,RQ
Description
MOSFET N-CH 650V 11.1A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TK11P65W,RQ PDF
TK11P65W,RQ Tech Specifications
SeriesDTMOSIV
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C11.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 450µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds890 pF @ 300 V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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Request Quote Now

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