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TP2635N3-G

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Roving Networks / Microchip Technology TP2635N3-G

Manufacturer :
Roving Networks / Microchip Technology
Mfr. Part # :
TP2635N3-G
Description
MOSFET P-CH 350V 180MA TO92-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TP2635N3-G PDF
TP2635N3-G Tech Specifications
Series-
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)350 V
Current - Continuous Drain (Id) @ 25°C180mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs15Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds300 pF @ 25 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Request Quote Now

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