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R6030ENZ1C9

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ROHM Semiconductor R6030ENZ1C9

Manufacturer :
ROHM Semiconductor
Mfr. Part # :
R6030ENZ1C9
Description
MOSFET N-CH 600V 30A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
R6030ENZ1C9 PDF
R6030ENZ1C9 Tech Specifications
Series-
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs85 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2100 pF @ 25 V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
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Request Quote Now

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