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IPC50N04S55R8ATMA1

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IR (Infineon Technologies) IPC50N04S55R8ATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPC50N04S55R8ATMA1
Description
MOSFET N-CH 40V 50A 8TDSON-33
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPC50N04S55R8ATMA1 PDF
In Stock
972
IPC50N04S55R8ATMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id3.4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1090 pF @ 25 V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-33
Package / Case8-PowerTDFN
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