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IPD90N06S4L05ATMA1

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Rochester Electronics IPD90N06S4L05ATMA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPD90N06S4L05ATMA1
Description
MOSFET N-CH 60V 90A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPD90N06S4L05ATMA1 PDF
IPD90N06S4L05ATMA1 Tech Specifications
SeriesOptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id2.2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds8.18 pF @ 25 V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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