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IPB020N10N5ATMA1

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IR (Infineon Technologies) IPB020N10N5ATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPB020N10N5ATMA1
Description
MOSFET N-CH 100V 120A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPB020N10N5ATMA1 PDF
IPB020N10N5ATMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 270µA
Gate Charge (Qg) (Max) @ Vgs210 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds15600 pF @ 50 V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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