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SQS481ENW-T1_GE3

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Vishay / Siliconix SQS481ENW-T1_GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SQS481ENW-T1_GE3
Description
MOSFET P-CH 150V 4.7A PPAK1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SQS481ENW-T1_GE3 PDF
SQS481ENW-T1_GE3 Tech Specifications
SeriesAutomotive, AEC-Q101, TrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.095Ohm @ 5A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds385 pF @ 75 V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8
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