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SQ2301ES-T1_GE3

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Vishay / Siliconix SQ2301ES-T1_GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SQ2301ES-T1_GE3
Description
MOSFET P-CH 20V 3.9A TO236
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SQ2301ES-T1_GE3 PDF
SQ2301ES-T1_GE3 Tech Specifications
SeriesAutomotive, AEC-Q101, TrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds425 pF @ 10 V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 175°C (TA)
Mounting TypeSurface Mount
Supplier Device PackageTO-236 (SOT-23)
Package / CaseTO-236-3, SC-59, SOT-23-3
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