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SIHD12N50E-GE3

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Vishay / Siliconix SIHD12N50E-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIHD12N50E-GE3
Description
MOSFET N-CH 550V 10.5A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIHD12N50E-GE3 PDF
In Stock
2153
SIHD12N50E-GE3 Tech Specifications
SeriesE
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550 V
Current - Continuous Drain (Id) @ 25°C10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds886 pF @ 100 V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-55°C ~ 150°C (TA)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252AA)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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