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SI1317DL-T1-GE3

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Vishay / Siliconix SI1317DL-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI1317DL-T1-GE3
Description
MOSFET P-CH 20V 1.4A SOT323
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI1317DL-T1-GE3 PDF
SI1317DL-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs150mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.5 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds272 pF @ 10 V
FET Feature-
Power Dissipation (Max)500mW (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-323
Package / CaseSC-70, SOT-323
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