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IPB45N06S409ATMA2

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Rochester Electronics IPB45N06S409ATMA2

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPB45N06S409ATMA2
Description
OPTLMOS N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPB45N06S409ATMA2 PDF
IPB45N06S409ATMA2 Tech Specifications
SeriesAutomotive, AEC-Q101, OptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9.4mOhm @ 45A, 10V
Vgs(th) (Max) @ Id4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3.785 pF @ 25 V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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