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IGT60R190D1SATMA1

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IR (Infineon Technologies) IGT60R190D1SATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IGT60R190D1SATMA1
Description
GANFET N-CH 600V 12.5A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IGT60R190D1SATMA1 PDF
IGT60R190D1SATMA1 Tech Specifications
SeriesCoolGaN™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-10V
Input Capacitance (Ciss) (Max) @ Vds157 pF @ 400 V
FET Feature-
Power Dissipation (Max)55.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-3
Package / Case8-PowerSFN
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