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N0412N-S19-AY

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Renesas Electronics America N0412N-S19-AY

Manufacturer :
Renesas Electronics America
Mfr. Part # :
N0412N-S19-AY
Description
MOSFET N-CH 40V 100A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
N0412N-S19-AY PDF
In Stock
917
N0412N-S19-AY Tech Specifications
Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5550 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 119W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
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Request Quote Now

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