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IRFHM8337TRPBF

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Rochester Electronics IRFHM8337TRPBF

Manufacturer :
Rochester Electronics
Mfr. Part # :
IRFHM8337TRPBF
Description
IRFHM8337 - HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IRFHM8337TRPBF PDF
IRFHM8337TRPBF Tech Specifications
SeriesHEXFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs8.1 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds755 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (3.3x3.3), Power33
Package / Case8-PowerTDFN
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