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IPT60R080G7XTMA1

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IR (Infineon Technologies) IPT60R080G7XTMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPT60R080G7XTMA1
Description
MOSFET N-CH 650V 29A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPT60R080G7XTMA1 PDF
IPT60R080G7XTMA1 Tech Specifications
SeriesCoolMOS™ G7
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1640 pF @ 400 V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-2
Package / Case8-PowerSFN
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