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NP36P06KDG-E1-AY

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Renesas Electronics America NP36P06KDG-E1-AY

Manufacturer :
Renesas Electronics America
Mfr. Part # :
NP36P06KDG-E1-AY
Description
MOSFET P-CH 60V 36A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NP36P06KDG-E1-AY PDF
NP36P06KDG-E1-AY Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs29.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs54 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 56W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Request Quote Now

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