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IPAW60R190CEXKSA1

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IR (Infineon Technologies) IPAW60R190CEXKSA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPAW60R190CEXKSA1
Description
MOSFET N-CH 600V 26.7A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPAW60R190CEXKSA1 PDF
IPAW60R190CEXKSA1 Tech Specifications
SeriesCoolMOS™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C26.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 100 V
FET FeatureSuper Junction
Power Dissipation (Max)34W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220 Full Pack
Package / CaseTO-220-3 Full Pack
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