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NTD3813N-35G

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Rochester Electronics NTD3813N-35G

Manufacturer :
Rochester Electronics
Mfr. Part # :
NTD3813N-35G
Description
MOSFET N-CH 16V 9.6A/51A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NTD3813N-35G PDF
In Stock
11550
NTD3813N-35G Tech Specifications
Series-
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)16 V
Current - Continuous Drain (Id) @ 25°C9.6A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.8 nC @ 4.5 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds963 pF @ 12 V
FET Feature-
Power Dissipation (Max)1.2W (Ta), 34.9W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Stub Leads, IPak
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