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TPH2R306NH,L1Q

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Toshiba Electronic Devices and Storage Corporation TPH2R306NH,L1Q

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TPH2R306NH,L1Q
Description
MOSFET N-CH 60V 60A 8SOP
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TPH2R306NH,L1Q PDF
TPH2R306NH,L1Q Tech Specifications
SeriesU-MOSVIII-H
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6.5V, 10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6100 pF @ 30 V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 78W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN
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