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TK31A60W,S4VX

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Toshiba Electronic Devices and Storage Corporation TK31A60W,S4VX

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TK31A60W,S4VX
Description
MOSFET N-CH 600V 30.8A TO220SIS
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TK31A60W,S4VX PDF
In Stock
321
TK31A60W,S4VX Tech Specifications
SeriesDTMOSIV
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs88mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs86 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 300 V
FET FeatureSuper Junction
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack
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