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IPI530N15N3GXKSA1

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Rochester Electronics IPI530N15N3GXKSA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPI530N15N3GXKSA1
Description
PFET, 21A I(D), 150V, 0.053OHM,
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPI530N15N3GXKSA1 PDF
IPI530N15N3GXKSA1 Tech Specifications
SeriesOptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Rds On (Max) @ Id, Vgs53mOhm @ 18A, 10V
Vgs(th) (Max) @ Id4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds887 pF @ 75 V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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Request Quote Now

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