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TK160F10N1,LXGQ

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Toshiba Electronic Devices and Storage Corporation TK160F10N1,LXGQ

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TK160F10N1,LXGQ
Description
MOSFET N-CH 100V 160A TO220SM
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TK160F10N1,LXGQ PDF
TK160F10N1,LXGQ Tech Specifications
SeriesU-MOSVIII-H
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C160A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs121 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8510 pF @ 10 V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device PackageTO-220SM(W)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Request Quote Now

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