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SPB04N60C3ATMA1

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Rochester Electronics SPB04N60C3ATMA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
SPB04N60C3ATMA1
Description
MOSFET N-CH 650V 4.5A TO263-3-2
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SPB04N60C3ATMA1 PDF
In Stock
54444
SPB04N60C3ATMA1 Tech Specifications
SeriesCoolMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Request Quote Now

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