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IPA65R190E6XKSA1

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Rochester Electronics IPA65R190E6XKSA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPA65R190E6XKSA1
Description
PFET, 650V, 0.19OHM, 1-ELEMENT,
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPA65R190E6XKSA1 PDF
IPA65R190E6XKSA1 Tech Specifications
SeriesCoolMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs73 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1.62 pF @ 100 V
FET Feature-
Power Dissipation (Max)34W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220 Full Pack
Package / CaseTO-220-3 Full Pack
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Request Quote Now

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