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SISS98DN-T1-GE3

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Vishay / Siliconix SISS98DN-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SISS98DN-T1-GE3
Description
MOSFET N-CH 200V 14.1A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SISS98DN-T1-GE3 PDF
In Stock
4388
SISS98DN-T1-GE3 Tech Specifications
SeriesThunderFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C14.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs105mOhm @ 7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14 nC @ 7.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds608 pF @ 100 V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8
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Request Quote Now

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