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IPB015N04LGATMA1

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IR (Infineon Technologies) IPB015N04LGATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPB015N04LGATMA1
Description
MOSFET N-CH 40V 120A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPB015N04LGATMA1 PDF
IPB015N04LGATMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs346 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds28000 pF @ 25 V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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