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TK17E65W,S1X

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Toshiba Electronic Devices and Storage Corporation TK17E65W,S1X

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TK17E65W,S1X
Description
MOSFET N-CH 650V 17.3A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TK17E65W,S1X PDF
TK17E65W,S1X Tech Specifications
SeriesDTMOSIV
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs200mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 300 V
FET Feature-
Power Dissipation (Max)165W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
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