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SPD03N50C3ATMA1

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Rochester Electronics SPD03N50C3ATMA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
SPD03N50C3ATMA1
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SPD03N50C3ATMA1 PDF
SPD03N50C3ATMA1 Tech Specifications
SeriesCoolMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V
FET Feature-
Power Dissipation (Max)38W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-1
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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