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BSC886N03LSGATMA1

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IR (Infineon Technologies) BSC886N03LSGATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
BSC886N03LSGATMA1
Description
MOSFET N-CH 30V 13A/65A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
BSC886N03LSGATMA1 PDF
In Stock
4910
BSC886N03LSGATMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2100 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 39W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN
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