Series | - | |
Package | Bulk | |
Part Status | Obsolete | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20 V | |
Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 10 V | |
FET Feature | Schottky Diode (Isolated) | |
Power Dissipation (Max) | 710mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 6-WDFN (2x2) | |
Package / Case | 6-WDFN Exposed Pad |
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