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IPT029N08N5ATMA1

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IR (Infineon Technologies) IPT029N08N5ATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPT029N08N5ATMA1
Description
MOSFET N-CH 80V 52A/169A HSOF-8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPT029N08N5ATMA1 PDF
In Stock
1800
IPT029N08N5ATMA1 Tech Specifications
SeriesOptiMOS™ 5
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C52A (Ta), 169A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.9mOhm @ 150A, 10V
Vgs(th) (Max) @ Id3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs87 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6500 pF @ 40 V
FET Feature-
Power Dissipation (Max)168W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8
Package / Case8-PowerSFN
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