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IPN60R2K1CEATMA1

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IR (Infineon Technologies) IPN60R2K1CEATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPN60R2K1CEATMA1
Description
MOSFET N-CH 600V 3.7A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPN60R2K1CEATMA1 PDF
In Stock
864
IPN60R2K1CEATMA1 Tech Specifications
SeriesCoolMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.1Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs6.7 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 100 V
FET FeatureSuper Junction
Power Dissipation (Max)5W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223
Package / CaseSOT-223-3
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