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IQE013N04LM6ATMA1

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IR (Infineon Technologies) IQE013N04LM6ATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IQE013N04LM6ATMA1
Description
MOSFET N-CH 40V 31A/205A 8TSON
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IQE013N04LM6ATMA1 PDF
In Stock
9828
IQE013N04LM6ATMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C31A (Ta), 205A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs1.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 51µA
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 20 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device PackagePG-TSON-8-4
Package / Case8-PowerTDFN
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