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IPD90R1K2C3ATMA2

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IR (Infineon Technologies) IPD90R1K2C3ATMA2

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPD90R1K2C3ATMA2
Description
MOSFET N-CH 900V 2.1A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPD90R1K2C3ATMA2 PDF
IPD90R1K2C3ATMA2 Tech Specifications
SeriesCoolMOS™
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 0.31mA
Gate Charge (Qg) (Max) @ Vgs3.2 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds710 pF @ 100 V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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