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SI2356DS-T1-GE3

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Vishay / Siliconix SI2356DS-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI2356DS-T1-GE3
Description
MOSFET N-CH 40V 4.3A TO236
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI2356DS-T1-GE3 PDF
SI2356DS-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs51mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds370 pF @ 20 V
FET Feature-
Power Dissipation (Max)960mW (Ta), 1.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236
Package / CaseTO-236-3, SC-59, SOT-23-3
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Request Quote Now

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