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FDP10N60NZ

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Sanyo Semiconductor/ON Semiconductor FDP10N60NZ

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FDP10N60NZ
Description
MOSFET N-CH 600V 10A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDP10N60NZ PDF
FDP10N60NZ Tech Specifications
SeriesUniFET-II™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1475 pF @ 25 V
FET Feature-
Power Dissipation (Max)185W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
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