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IPL65R650C6SATMA1

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IR (Infineon Technologies) IPL65R650C6SATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPL65R650C6SATMA1
Description
MOSFET N-CH 650V 6.7A THIN-PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPL65R650C6SATMA1 PDF
IPL65R650C6SATMA1 Tech Specifications
SeriesCoolMOS™ C6
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 100 V
FET Feature-
Power Dissipation (Max)56.8W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageThin-PAK (5x6)
Package / Case8-PowerTDFN
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