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IPD60R380E6BTMA1

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Rochester Electronics IPD60R380E6BTMA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPD60R380E6BTMA1
Description
MOSFET N-CH 600V 10.6A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPD60R380E6BTMA1 PDF
IPD60R380E6BTMA1 Tech Specifications
SeriesCoolMOS™
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 100 V
FET FeatureSuper Junction
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 155°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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