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FDFME3N311ZT

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Rochester Electronics FDFME3N311ZT

Manufacturer :
Rochester Electronics
Mfr. Part # :
FDFME3N311ZT
Description
MOSFET N-CH 30V 1.8A 6UMLP
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDFME3N311ZT PDF
FDFME3N311ZT Tech Specifications
SeriesPowerTrench®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs299mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds75 pF @ 15 V
FET Feature-
Power Dissipation (Max)600mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-UMLP (1.6x1.6)
Package / Case6-UFDFN Exposed Pad
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