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IPB60R160P6ATMA1

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IR (Infineon Technologies) IPB60R160P6ATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPB60R160P6ATMA1
Description
MOSFET N-CH 600V 23.8A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPB60R160P6ATMA1 PDF
IPB60R160P6ATMA1 Tech Specifications
SeriesCoolMOS™ P6
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2080 pF @ 100 V
FET Feature-
Power Dissipation (Max)176W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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